rf 0 1019 , rev . b ( 2/11/13 ) ?201 3 microsemi corporation page 1 of 6 m smbg 2k3.0 C m smbg 2k5.0, msmbj2k3.0 C msmbj2k5.0 available 2 kw s urface m ount t ransient v oltage s uppressor screening in reference to mil - prf - 19500 available description the m smb g(j) 2k3.0 C m smb g(j) 2k5.0 series of surface mount 2.0 kilo watt transient voltage suppressors provide a selection of standoff voltages (v wm ) from 3 .0 to 5.0 volts. these high - reliability controlled devices feature unidirectional construction. the smbg gull - wing design in the do - 215aa package is idea l for visible solder connections. the smbj j- bend design in the do - 214aa package is ideal for greater pc board mounting density. it is also available as rohs c ompliant. do - 215aa (smbg) package do - 21 4 aa (smbj) package note: all smb series are equivalent to prior sms package identifications. important: for the latest information, visit our website http://www.microsemi.com . features ? high reliability upscreened devices with wafer fabrication and a ssembly lot traceability . ? all devices 100 % surge tested . ? suppresses transients up to 2 kw @ 8/20 s . ? other screening in reference to mil - prf - 19500 is also available. refer to micronote 129 for more details on the screening options . (see part nomenclature for all options.) ? moisture classification is level 1 with no dry pack required per ipc/jedec j - std - 020b . ? 3 lot norm screening performed on s tandby c urrent i d . ? rohs compliant versions available. applications / benefits ? voltage and reverse standby (leakage) current lowest available . ? protects sensitive components such as ics, cmos, bipolar, bicmos, ecl, dtl, t2l, etc. ? protection from switching transients & induced rf . ? compliant to iec61000 -4- 2 and iec61000 -4- 4 for esd and eft protection respectively . ? secondary lightning protection per iec61000 -4- 5 with 42 o hms source impedance for c lass 1 . maximum ratings @ 25 oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parame ters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +150 o c peak pulse power dissipation (1) 8/20 us 10/1000us p pp 2000 300 w off - state power dissipation @ t l < 25 oc @ t a = 25 oc p d 5 1.38 (2) w t clamping (0 v olts to v ( br) min) <100 ps for w ard voltage @ 30 a (3) v f 1.2 v solde r temperature @ 10 s t sp 260 o c notes : 1. with impulse repetition rate (duty factor) of 0.01 maximum (also figure 1 and 4 ). 2. w hen mounted on fr4 pc board (1oz cu) with recommended footprint (see last page ). 3. peak impulse of 8.3 ms half - sine wave. downloaded from: http:///
rf 0 1019 , rev . b ( 2/11/13 ) ?201 3 microsemi corporation page 2 of 6 m smbg 2k3.0 C m smbg 2k5.0, msmbj2k3.0 C msmbj2k5.0 mechanical and packaging ? case: void- free transfer molded thermosetting epoxy body meeting ul94v -0 requirements . ? te rminals: t in -l ea d or rohs co mp li an t an ne a le d ma tte-tin plating r ead ily so l de ra bl e pe r mil- std- 750 , me thod 2 02 6. ? marking: part number. ? polarity: cathode end band ed . ? tape & reel option: standard per eia - 296 (add tr suffix to part number ). consult f actory for quantities. ? weight: 0.1 grams (approximate) . ? see p ackage d imensions on last page. part nomenclature m sm b g 2k 3.0 (e3) reliability level * m ma mx mxl *(see micronote 129 ) surface mount package package size lead f orm g = gull - wing j = j - bend rohs compliance e3 = rohs compliant blank = non - rohs compliant stand- off voltage (v wm ) (see electrical characteristics table) 2 kw transient suppression symbols & definitions symbol definition v wm w or king peak (st an doff ) v oltage - the maximum peak voltage that can be applied over the operating temperature range. th is is also referred to as s tandoff v oltage. p pp p ea k pulse power - rated random recurring peak impulse power dissipation. v ( br) br eak down v ol tage - the minimum voltage the device will exhibit at a specified current . i d st andb y current - the current at the rated standoff voltage (v wm ). i pp p ea k pulse current - the peak current during the impulse. v c cl am p in g v ol tage - clamping v oltage at i pp (peak pulse current) at the specified pulse conditions (typically shown as maximum value). i ( br ) br eak down curr en t C the current used for measuring breakdown voltage v ( br) . electrical characteristics @ 25 oc par t nu mber br eak down vo lt a ge minimum v ( br) br eak down curr e nt i (br) ra te d sta nd of f vo lt a ge v wm ma x sta nd by curr e nt i d @ v wm ma x clamp ing vo lt a ge v c @ i pp pe ak pulse curr e nt i pp tempe ra t ure co eff ic iant of v (br) v(br) gull - wing j- bend v ma v a v a % / o c msmbg2k3.0 msmbg2k3.3 msmbg2k4.0 msmbg2k4.5 msmbg2k5.0 msm bj 2k3.0 msm bj 2k3.3 msm bj 2k4.0 msm bj 2k4.5 msm bj 2k5.0 4.3 4.6 5.0 5.4 5.9 50 50 50 50 50 3.0 3.3 4.0 4.5 5.0 1500 700 400 50 5 5.4 5.8 6.3 6.6 7.6 10 10 10 10 10 +0/ -0.05 0. 02 5 0. 03 0 0. 04 0 +0. 05 0 downloaded from: http:///
rf 0 1019 , rev . b ( 2/11/13 ) ?201 3 microsemi corporation page 3 of 6 m smbg 2k3.0 C m smbg 2k5.0, msmbj2k3.0 C msmbj2k5.0 graphs t w - pulse width - s figure 1 peak pulse power vs pulse time test waveform parameters tr=8 s, tp=20 s figure 2 pulse waveform for 8/20 s exponential surge p pp C peak pulse power - kw i pp C peak pulse current C % i pp downloaded from: http:///
rf 0 1019 , rev . b ( 2/11/13 ) ?201 3 microsemi corporation page 4 of 6 m smbg 2k3.0 C m smbg 2k5.0, msmbj2k3.0 C msmbj2k5.0 graphs (continued) t C time C ms test waveform parameters: tr=10 s, tp=1000s figure 3 pulse waveform for 10/1000 exponential surge t l lead temperature c figure 4 derating curve p eak pulse power (p pp ) or continuous power in percent of 25c ratio pulse current in percent of i pp downloaded from: http:///
rf 0 1019 , rev . b ( 2/11/13 ) ?201 3 microsemi corporation page 5 of 6 m smbg 2k3.0 C m smbg 2k5.0, msmbj2k3.0 C msmbj2k5.0 package dimensions see pad layout on next page. dimensions ltr inch millimeters min max min ma x a 0 .077 0. 083 1.96 2.10 b 0 .160 0 .180 4.06 4.57 c 0 .130 0 .155 3.30 3.94 e 0 .077 0 .104 1.95 2.65 f 0 .235 0 .255 5.97 6.48 k 0 .015 0 .030 0 .381 0 .762 dimensions ltr inch millimeters min max min max a 0 .077 0. 083 1.96 2.10 b 0 .160 0 .180 4.06 4.57 c 0 .130 0 .155 3.30 3.94 d 0 .205 0 .220 5.21 5.59 e 0 .077 0 .104 1.95 2.65 l 0 .030 0 .060 0 .760 1.52 sm bg (do -215aa) sm bj (do - 21 4aa) downloaded from: http:///
rf 0 1019 , rev . b ( 2/11/13 ) ?201 3 microsemi corporation page 6 of 6 m smbg 2k3.0 C m smbg 2k5.0, msmbj2k3.0 C msmbj2k5.0 pad layout smbg (do - 215aa) ltr inch millimeters a 0.320 8.13 b 0.085 2.16 c 0.110 2.79 sm bj (do - 214a a) ltr inch millimeters a 0.260 6.60 b 0.085 2.16 c 0.110 2.79 downloaded from: http:///
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